2SD2653KT146 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 90mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 360MHz is present in the part.Input voltage breakdown is available at 12V volts.A maximum collector current of 2A volts can be achieved.
2SD2653KT146 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz
2SD2653KT146 Applications
There are a lot of ROHM Semiconductor 2SD2653KT146 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
