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JAN2N3055

JAN2N3055

JAN2N3055

Microsemi Corporation

JAN2N3055 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3055 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/407
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation6W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation6W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 2V @ 3.3A, 10A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:172 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$51.05100$5105.1

JAN2N3055 Product Details

JAN2N3055 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 4A 4V.When VCE saturation is 2V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

JAN2N3055 Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 2V @ 3.3A, 10A
the emitter base voltage is kept at 7V

JAN2N3055 Applications


There are a lot of Microsemi Corporation JAN2N3055 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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