2SA1770S-AN Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As a result, it can handle voltages as low as 160V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SA1770S-AN Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
2SA1770S-AN Applications
There are a lot of ON Semiconductor 2SA1770S-AN applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
