MJD32CTF Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -1.2V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 3MHz.As a result, it can handle voltages as low as 100V volts.A maximum collector current of 3A volts can be achieved.
MJD32CTF Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CTF Applications
There are a lot of ON Semiconductor MJD32CTF applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
