2SA1417S-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -220mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 100mA, 1A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.Single BJT transistor can be broken down at a voltage of 100V volts.In extreme cases, the collector current can be as low as 2A volts.
2SA1417S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -6V
2SA1417S-TD-E Applications
There are a lot of ON Semiconductor 2SA1417S-TD-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
