2SC5706-TL-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is 160mV, which allows for maximum design flexibility.A VCE saturation (Max) of 240mV @ 100mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.400MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.A maximum collector current of 5A volts can be achieved.
2SC5706-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-TL-E Applications
There are a lot of ON Semiconductor 2SC5706-TL-E applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
