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KSD560OTU

KSD560OTU

KSD560OTU

ON Semiconductor

KSD560OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD560OTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code8541.29.00.95
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Base Part Number KSD560
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE
Power - Max 1.5W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 3000 @ 3A 2V
Current - Collector Cutoff (Max) 1μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 5A
RoHS StatusRoHS Compliant
In-Stock:3085 items

KSD560OTU Product Details

KSD560OTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 3000 @ 3A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 3mA, 3A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSD560OTU Features


the DC current gain for this device is 3000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A

KSD560OTU Applications


There are a lot of ON Semiconductor KSD560OTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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