2N5952 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website
SOT-23
2N5952 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated
30V
Current Rating (Amps)
8mA
Reach Compliance Code
unknown
Frequency
1kHz
Base Part Number
2N5952
Transistor Type
N-Channel JFET
Noise Figure
2dB
Voltage - Test
15V
In-Stock:1751 items
2N5952 Product Details
2N5952 RF Amplifier Description
The 2N5952 is an N-Channel RF Amplifier which can be sourced from process 50. This device is designed primarily for electronic switching applications such as low on resistance analog switching. It is commonly used as a replacement of the 2N5457 in phase circuits.
2N5952 JEFT MOSFET Features
Maximum Power Dissipation (Pd): 0.36 W Maximum Drain-Source Voltage (Vds): 30 V Maximum Gate-Source Voltage (Vgs): 3 V Power Dissipation: 350mW Maximum Drain Current |Id|: 8mA Low On Resistance Maximum Junction Temperature : 150 °C (Tj)
2N5952 Transistor Applications
Electronic Switches Phase Circuits Amplifiers Analog Devices Buffers Choppers
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