2N5551TF Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 160V volts that it can take.A maximum collector current of 600mA volts can be achieved.
2N5551TF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TF Applications
There are a lot of ON Semiconductor 2N5551TF applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
