12A02CH-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.A VCE saturation (Max) of 240mV @ 20mA, 400mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 450MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
12A02CH-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 240mV @ 20mA, 400mA
the emitter base voltage is kept at 5V
a transition frequency of 450MHz
12A02CH-TL-E Applications
There are a lot of ON Semiconductor 12A02CH-TL-E applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
