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2N5401TA

2N5401TA

2N5401TA

ON Semiconductor

2N5401TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5401TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 178.2mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC -160V
Max Power Dissipation625mW
Current Rating-600mA
Frequency 400MHz
Base Part Number 2N5401
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation625mW
Power - Max 625mW
Gain Bandwidth Product300MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage150V
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 600mA
Max Frequency 400MHz
Frequency - Transition 400MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2850 items

2N5401TA Product Details

2N5401TA Overview


In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.Single BJT transistor comes in a supplier device package of TO-92-3.The device exhibits a collector-emitter breakdown at 150V.A maximum collector current of 600mA volts is possible.

2N5401TA Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3

2N5401TA Applications


There are a lot of ON Semiconductor 2N5401TA applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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