2SB1181TLQ Overview
DC current gain in this device equals 120 @ 100mA 3V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.Continuous collector voltage should be kept at -1A for high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SB1181TLQ Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
2SB1181TLQ Applications
There are a lot of ROHM Semiconductor 2SB1181TLQ applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
