2N4401NLBU Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N4401NLBU Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
2N4401NLBU Applications
There are a lot of ON Semiconductor 2N4401NLBU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
