MJD210G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.A transition frequency of 65MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
MJD210G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210G Applications
There are a lot of ON Semiconductor MJD210G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
