2N4401G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.250MHz is present in the transition frequency.The maximum collector current is 600mA volts.
2N4401G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401G Applications
There are a lot of ON Semiconductor 2N4401G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
