2N3904ZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.In this part, there is a transition frequency of 300MHz.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 200mA volts at its maximum.
2N3904ZL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904ZL1G Applications
There are a lot of ON Semiconductor 2N3904ZL1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
