BUL381D Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.1V @ 750mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In extreme cases, the collector current can be as low as 5A volts.
BUL381D Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
BUL381D Applications
There are a lot of STMicroelectronics BUL381D applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver