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BU407TU

BU407TU

BU407TU

ON Semiconductor

BU407TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BU407TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 60W
Transistor Type NPN
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 7A
Frequency - Transition 10MHz
In-Stock:1902 items

BU407TU Product Details

BU407TU Overview


Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500mA, 5A.TO-220-3 is the supplier device package for this product.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.

BU407TU Features


the vce saturation(Max) is 1V @ 500mA, 5A
the supplier device package of TO-220-3

BU407TU Applications


There are a lot of ON Semiconductor BU407TU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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