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JAN2N3421S

JAN2N3421S

JAN2N3421S

Microsemi Corporation

JAN2N3421S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3421S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/393
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 2V
Current - Collector Cutoff (Max) 5μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Base Voltage (VCBO) 125V
Emitter Base Voltage (VEBO) 8V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:407 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$19.79190$1979.19

JAN2N3421S Product Details

JAN2N3421S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 2V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 8V allows for a high level of efficiency.When collector current reaches its maximum, it can reach 3A volts.

JAN2N3421S Features


the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V

JAN2N3421S Applications


There are a lot of Microsemi Corporation JAN2N3421S applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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