Name: IRFZ44Z
Brand: Infineon Technologies
SKU: IRFZ44Z
Availability: InStock

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IRFZ44Z

Manufacturer part number:IRFZ44Z

Manufacturer:Infineon Technologies

Description:IRFZ44Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFZ44Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	80W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13.9m Ω @ 31A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1420pF @ 25V
Current - Continuous Drain (Id) @ 25°C	51A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	51A
Drain-source On Resistance-Max	0.0139Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	86 mJ
RoHS Status	Non-RoHS Compliant

IRFZ44Z Product Details

IRFZ44Z Description

The IRFZ44Z is a 55V single N-channel HEXFET? Power MOSFET utilizing the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175??C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. Its features combine to make this design an extremely efficient and reliable device for a wide variety of applications.