PHB78NQ03LT,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 185 mJ.A device's maximum input capacitance is 970pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 40A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
PHB78NQ03LT,118 Features
the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 160A.
a 25V drain to source voltage (Vdss)
PHB78NQ03LT,118 Applications
There are a lot of NXP USA Inc.
PHB78NQ03LT,118 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
