FDT434P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDT434P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 9 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
250.2mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
50mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-5.5A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1187pF @ 10V
Current - Continuous Drain (Id) @ 25°C
6A Ta
Gate Charge (Qg) (Max) @ Vgs
19nC @ 4.5V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
6A
Threshold Voltage
-600mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
6A
Drain to Source Breakdown Voltage
-20V
Pulsed Drain Current-Max (IDM)
30A
Dual Supply Voltage
20V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-600 mV
Height
1.8mm
Length
6.5mm
Width
3.56mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3805 items
FDT434P Product Details
FDT434P Description
FDT434P is a P-Channel Power Trench MOSFET with a voltage of 2.5V from the manufacturer of ON Semiconductor. The operating temperature of FDT434P is -55°C~150°C TJ and its maximum power dissipation are 3W Ta. It is available in TO-261-4, TO-261AA packaging way. This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
FDT434P Features
Low gate charge (13nC typical)
High-performance trench technology for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
FDT434P Applications
Low Dropout Regulator
DC/DC converter
Load switch
Motor driving
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