Name: PHB73N06T,118
Brand: NXP USA Inc.
SKU: PHB73N06T,118
Availability: InStock

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PHB73N06T,118

Manufacturer part number:PHB73N06T,118

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14m Ω @ 25A, 10V ±20V 2464pF @ 25V 54nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:PHB73N06T,118 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	166W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	14m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2464pF @ 25V
Current - Continuous Drain (Id) @ 25°C	73A Tc
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

PHB73N06T,118 Product Details

PHB73N06T,118 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2464pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.