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NVD5802NT4G

NVD5802NT4G

NVD5802NT4G

ON Semiconductor

MOSFET N-CH 40V 16.4A DPAK

SOT-23

NVD5802NT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 27 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 93.75W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 101A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time52ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 101A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16.4A
Drain-source On Resistance-Max 0.0078Ohm
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 240 mJ
Height 2.38mm
Length 6.22mm
Width 6.73mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1269 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.546710$5.54671
10$5.232746$52.32746
100$4.936552$493.6552
500$4.657125$2328.5625
1000$4.393515$4393.515

About NVD5802NT4G

The NVD5802NT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 40V 16.4A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NVD5802NT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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