MW7IC2020NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MW7IC2020NT1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
24-PowerQFN
Surface Mount
YES
Mounting Feature
SURFACE MOUNT
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
24
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
65V
HTS Code
8542.33.00.01
Subcategory
RF/Microwave Amplifiers
Technology
MOS
Number of Functions
1
Construction
COMPONENT
Frequency
2.14GHz
Base Part Number
MW7IC2020
Power Supplies
28V
Current - Test
40mA
Transistor Type
LDMOS
Gain
32.6dB
RF/Microwave Device Type
NARROW BAND HIGH POWER
Power - Output
2.4W
VSWR-Max
10
Input Power-Max (CW)
37dBm
Characteristic Impedance
50Ohm
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
In-Stock:217 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MW7IC2020NT1 Product Details
MW7IC2020NT1 Description
With on-chip matching, the MW7IC2020NT1 wideband integrated circuit can be used from 1805 to 2170 MHz. This multi-stage structure supports all common cellular base station modulation formats and is rated for 26 to 32 Volt operation.
MW7IC2020NT1 Features
series equivalent large-signal impedance parameters, and
S—Parameters from a Common Source
At-Chip Matching (50 Ohm Input, DC Blocked)
Compensated for Integrated Quiescent Current Temperature
in reel-to-reel. 1000 Units, 16 mm Tape Width, 13-inch Reel; T1 Suffix.
MW7IC2020NT1 Applications
Switching applications
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