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MRFE6VP6600GNR3

MRFE6VP6600GNR3

MRFE6VP6600GNR3

NXP USA Inc.

RF MOSFET Transistors BL RF

SOT-23

MRFE6VP6600GNR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case OM-780G-4L
PackagingTape & Reel (TR)
Published 2009
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated 133V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 230MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 24.7dB
Power - Output 600W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:87 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$87.13364$21783.41

About MRFE6VP6600GNR3

The MRFE6VP6600GNR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors BL RF.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRFE6VP6600GNR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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