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MRFE6S9160HSR3

MRFE6S9160HSR3

MRFE6S9160HSR3

NXP USA Inc.

MRFE6S9160HSR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRFE6S9160HSR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-780S
PackagingTape & Reel (TR)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 66V
HTS Code8541.29.00.75
Frequency 880MHz
Base Part Number MRFE6S9160
Current - Test 1.2A
Transistor Type LDMOS
Gain 21dB
Power - Output 35W
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:96 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$75.540400$75.5404
10$71.264528$712.64528
100$67.230687$6723.0687
500$63.425176$31712.588
1000$59.835072$59835.072

MRFE6S9160HSR3 Product Details

MRFE6S9160HSR3 Description


Designed for use in base station applications for N-CDMA, GSM, and GSM EDGE using frequencies between 865 and 960 MHz. suitable for applications requiring multicarrier amplifiers. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



MRFE6S9160HSR3 Features


? series equivalent large-signal impedance parameters


? Internally Matching for User-Friendliness


? Up to a Maximum of 32 VDD Operation Qualified


? Protection from Integrated ESD


? RoHS conformant


? on reel-to-reel tape. 250 Units per 56 mm, 13 inch Reel, R3 Suffix.



MRFE6S9160HSR3 Applications


Switching applications


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