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MRFE6S9060GNR1

MRFE6S9060GNR1

MRFE6S9060GNR1

NXP USA Inc.

Transistors RF MOSFET Power HV6E 60W TO 270-2GN FET

SOT-23

MRFE6S9060GNR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case TO-270BB
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 66V
Frequency 880MHz
Base Part Number MRFE6S9060
Current - Test 450mA
Transistor Type LDMOS
Gain 21.1dB
Power - Output 14W
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:198 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$47.35000$47.35
500$46.8765$23438.25
1000$46.403$46403
1500$45.9295$68894.25
2000$45.456$90912
2500$44.9825$112456.25

About MRFE6S9060GNR1

The MRFE6S9060GNR1 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features Transistors RF MOSFET Power HV6E 60W TO 270-2GN FET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRFE6S9060GNR1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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