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MRF9030NR1

MRF9030NR1

MRF9030NR1

NXP USA Inc.

MRF9030NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF9030NR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Package / Case TO-270AA
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 65V
Reach Compliance Code not_compliant
Frequency 945MHz
Base Part Number MRF9030
Current - Test 250mA
Transistor Type LDMOS
Gain 20dB
Power - Output 30W
Voltage - Test 26V
RoHS StatusNon-RoHS Compliant
In-Stock:3701 items

MRF9030NR1 Product Details

MRF9030NR1 Description

The MRF9030NR1 is a high-frequency RF power transistor with a frequency range of 1-1000 MHz and an output power of 30W. It offers high gain and efficiency, making it ideal for use in applications such as FM radio broadcast transmitters, industrial heating, and plasma generators. The transistor has excellent ruggedness and thermal stability, ensuring reliable and consistent performance in harsh environments. Its compact size and ease of use make it an excellent choice for high-frequency power amplifier design.



MRF9030NR1 Features

Frequency range: 1-1000 MHz

Output power: 30W

High gain and efficiency

Excellent ruggedness and thermal stability



MRF9030NR1 Applications

FM radio broadcast transmitters

Industrial heating

Plasma generators




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