The NXP Semiconductors MRF9030LR1 is a high-performance RF MOSFET transistor designed for use in radio frequency (RF) applications. It is a N-channel enhancement-mode MOSFET with a maximum drain-source voltage of 68V and a maximum drain current of 360mA. The device is housed in a 3-pin NI-360 T/R package and is suitable for use in a wide range of RF applications, including cellular base stations, wireless LANs, and RF amplifiers.
Features:
• High-performance RF MOSFET transistor • N-channel enhancement-mode MOSFET • Maximum drain-source voltage of 68V • Maximum drain current of 360mA • 3-pin NI-360 T/R package • Suitable for use in a wide range of RF applications
