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MRF8S8260HR3

MRF8S8260HR3

MRF8S8260HR3

NXP USA Inc.

RF MOSFET Transistors HV8 900MHZ 260W NI880H

SOT-23

MRF8S8260HR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case NI-880
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 70V
HTS Code8541.29.00.75
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 895MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8S8260
JESD-30 Code R-CDFM-F2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.5A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 21.1dB
DS Breakdown Voltage-Min 70V
Power - Output 70W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:1512 items

About MRF8S8260HR3

The MRF8S8260HR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors HV8 900MHZ 260W NI880H.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8S8260HR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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