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MRF8S18210WGHSR3

MRF8S18210WGHSR3

MRF8S18210WGHSR3

NXP USA Inc.

RF MOSFET Transistors HV8 1.8GHZ 210W

SOT-23

MRF8S18210WGHSR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-880XS-2 GW
Surface MountYES
PackagingTape & Reel (TR)
Published 2006
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 65V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 1.93GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8S18210
Operating Temperature (Max) 125°C
Configuration Single
Current - Test 1.3A
Transistor Type N-Channel
Gain 17.8dB
Power - Output 50W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 30V
RoHS StatusROHS3 Compliant
In-Stock:66 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$103.12516$25781.29

About MRF8S18210WGHSR3

The MRF8S18210WGHSR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors HV8 1.8GHZ 210W.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8S18210WGHSR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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