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MRF8P26080HR3

MRF8P26080HR3

MRF8P26080HR3

NXP USA Inc.

RF MOSFET Transistors HV8 2.6GHZ 80W NI780-4

SOT-23

MRF8P26080HR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case NI780-4
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
HTS Code8541.29.00.75
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.62GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8P26080
JESD-30 Code R-CDFM-F4
Qualification StatusNot Qualified
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 300mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 15dB
DS Breakdown Voltage-Min 65V
Power - Output 14W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:1258 items

About MRF8P26080HR3

The MRF8P26080HR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors HV8 2.6GHZ 80W NI780-4.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8P26080HR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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