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MRF8P23160WHR3

MRF8P23160WHR3

MRF8P23160WHR3

NXP USA Inc.

RF MOSFET Transistors HV8 2.3GHz 160W NI780-4

SOT-23

MRF8P23160WHR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case NI-780-4
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code 5A991
Voltage - Rated 65V
HTS Code8541.29.00.75
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.32GHz
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-CDFM-F4
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 600mA
Transistor Application AMPLIFIER
Transistor Type N-Channel
Gain 14.1dB
DS Breakdown Voltage-Min 65V
Power - Output 30W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:3421 items

About MRF8P23160WHR3

The MRF8P23160WHR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors HV8 2.3GHz 160W NI780-4.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF8P23160WHR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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