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MRF6VP3450HR5

MRF6VP3450HR5

MRF6VP3450HR5

NXP USA Inc.

MRF6VP3450HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF6VP3450HR5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-1230
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 110V
HTS Code8541.29.00.75
Subcategory FET General Purpose Power
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 860MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF6VP3450
JESD-30 Code R-CDFM-F4
Qualification StatusNot Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.4A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 22.5dB
DS Breakdown Voltage-Min 110V
Power - Output 90W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:82 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$207.80000$207.8
500$205.722$102861
1000$203.644$203644
1500$201.566$302349
2000$199.488$398976
2500$197.41$493525

MRF6VP3450HR5 Product Details



MRF6VP3450HR5 Description

MRF6VP3450HR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF6VP3450HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6VP3450HR5 has the common source configuration.

MRF6VP3450HR5 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

MRF6VP3450HR5 Applications

ISM applications

DC large signal applications


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