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MRF6VP11KGSR5

MRF6VP11KGSR5

MRF6VP11KGSR5

NXP USA Inc.

Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R

SOT-23

MRF6VP11KGSR5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-1230S-4 GW
PackagingTape & Reel (TR)
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 110V
HTS Code8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF6VP11
Operating Temperature (Max) 150°C
Current - Test 150mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 26dB
Power - Output 1000W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:1968 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$269.651167$269.651167
10$254.387893$2543.87893
100$239.988578$23998.8578
500$226.404319$113202.1595
1000$213.588981$213588.981

About MRF6VP11KGSR5

The MRF6VP11KGSR5 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans RF MOSFET N-CH 110V 5-Pin NI-1230S T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF6VP11KGSR5, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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