MRF6V2150NBR1 Description
MRF6V2150NBR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6V2150NBR1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2150NBR1 has the common source configuration.
MRF6V2150NBR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6V2150NBR1 Applications
ISM applications
DC large signal applications
