MRF6V2010NR1 Description
MRF6V2010NR1 RF power transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MRF6V2010NR1 transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2010NR1 has the common source configuration.
MRF6V2010NR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6V2010NR1 Applications
ISM applications
DC large signal applications
