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MRF6V12500HR3

MRF6V12500HR3

MRF6V12500HR3

NXP USA Inc.

MRF6V12500HR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF6V12500HR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOT-957A
Supplier Device Package NI-780H-2L
PackagingTape & Reel (TR)
Published 2010
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 110V
Frequency 1.03GHz
Base Part Number MRF6V12500
Current - Test 200mA
Transistor Type LDMOS
Gain 19.7dB
Power - Output 500W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:2155 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MRF6V12500HR3 Product Details

MRF6V12500HR3 Description


These RF power transistors are made for devices like secondary radars for air traffic control, transponders, and distance measurement equipment (DME) that operate at frequencies between 960 and 1215 MHz. These gadgets can be used in pulse applications, such as Mode S ELM.



MRF6V12500HR3 Features


  • Series equivalent large-signal impedance parameters are used to describe it.

  • Internally Matched for User-Friendliness and Qualified for a Maximum of 50 VDD Operations

  • Integrated ESD Defense

  • Improved Class C Operation through Extended Negative Gate-Source Voltage Range



MRF6V12500HR3 Applications


Switching applications


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