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MRF6V10250HSR3

MRF6V10250HSR3

MRF6V10250HSR3

NXP USA Inc.

FET RF 100V 1.09GHZ NI780S

SOT-23

MRF6V10250HSR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case NI-780S
Surface MountYES
Transistor Element Material SILICON
PackagingTape & Reel (TR)
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Voltage - Rated 100V
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 1.09GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating ModeENHANCEMENT MODE
Case Connection SOURCE
Current - Test 250mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 21dB
DS Breakdown Voltage-Min 100V
Power - Output 250W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:1379 items

About MRF6V10250HSR3

The MRF6V10250HSR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features FET RF 100V 1.09GHZ NI780S.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MRF6V10250HSR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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