MRF5S9101NR1 Description
MRF5S9101NR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRF5S9101NR1 N-channel suitable transistor for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF5S9101NR1 has the common source configuration.
MRF5S9101NR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF5S9101NR1 Applications
ISM applications
DC large signal applications
