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MRF1K50GNR5

MRF1K50GNR5

MRF1K50GNR5

NXP USA Inc.

MRF1K50GNR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF1K50GNR5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case OM-1230G-4L
PackagingTape & Reel (TR)
Published 2009
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Peak Reflow Temperature (Cel) 260
Frequency 1.8MHz~500MHz
[email protected] Reflow Temperature-Max (s) 40
Transistor Type LDMOS
Gain 23dB
Power - Output 1500W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:71 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$157.97600$7898.8

MRF1K50GNR5 Product Details

MRF1K50GNR5 Description


These very durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations, allowing them to operate in the 1.8 to 600 MHz frequency range.



MRF1K50GNR5 Features


? Ability to absorb avalanche energy with high drain-source efficiency


? Unmatched input and output allow for the use of a wide frequency range.


? The device can be used either single-ended or push-pull.


? For simplicity of usage, characterized from 30 to 50 V


? Suitable for use with lines



MRF1K50GNR5 Applications


Switching applications


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