Name: MRF1513NT1
Brand: NXP USA Inc.
SKU: MRF1513NT1
Price: 4.09000 USD
Availability: InStock

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MRF1513NT1

Manufacturer part number:MRF1513NT1

Manufacturer:NXP USA Inc.

Description:MRF1513NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:MRF1513NT1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Package / Case	PLD-1.5
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated	40V
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Current Rating (Amps)	2A
Terminal Position	QUAD
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Frequency	520MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MRF1513
JESD-30 Code	R-PQSO-N4
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Current - Test	50mA
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
Transistor Type	LDMOS
Gain	15dB
Drain Current-Max (Abs) (ID)	2A
DS Breakdown Voltage-Min	40V
Power - Output	3W
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	31.2W
Voltage - Test	12.5V
RoHS Status	ROHS3 Compliant

MRF1513NT1 Product Details

MRF1513NT1 Description

MRF1513NT1 is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MRF1513NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1513NT1 has the common source configuration.