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MHT1006NT1

MHT1006NT1

MHT1006NT1

NXP USA Inc.

RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V

SOT-23

MHT1006NT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
PackagingTape & Reel (TR)
Published 2014
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 65V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 2.17GHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 90mA
Transistor Type LDMOS
Gain 21.7dB
Power - Output 1.26W
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:3211 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About MHT1006NT1

The MHT1006NT1 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MHT1006NT1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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