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MHE1003NR3

MHE1003NR3

MHE1003NR3

NXP USA Inc.

RF POWER LDMOS TRANSISTOR FOR CO

SOT-23

MHE1003NR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case OM-780-2
PackagingTape & Reel (TR)
Published 2009
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) 260
Frequency 2.4GHz~2.5GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 50mA
Transistor Type LDMOS
Gain 14.1dB
Power - Output 53dBm
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:4862 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$130.19528$32548.82

About MHE1003NR3

The MHE1003NR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF POWER LDMOS TRANSISTOR FOR CO.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MHE1003NR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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