Name: PHB193NQ06T,118
Brand: NXP USA Inc.
SKU: PHB193NQ06T,118
Availability: InStock

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PHB193NQ06T,118

Manufacturer part number:PHB193NQ06T,118

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4mOhm @ 25A, 10V ±20V 5082pF @ 25V 85.6nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:PHB193NQ06T,118 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	300W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5082pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	85.6nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

PHB193NQ06T,118 Product Details

PHB193NQ06T,118 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5082pF @ 25V.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.