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AFV121KGSR5

AFV121KGSR5

AFV121KGSR5

NXP USA Inc.

BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHZ, 1000 W PE

SOT-23

AFV121KGSR5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case NI-1230-4S GW
PackagingTape & Reel (TR)
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 112V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 960MHz~1.22GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 19.6dB
Power - Output 1000W
Voltage - Test 50V
RoHS StatusROHS3 Compliant
In-Stock:37 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$524.57860$26228.93

About AFV121KGSR5

The AFV121KGSR5 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHZ, 1000 W PE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the AFV121KGSR5, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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