AFT27S006NT1 Description
AFT27S006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor AFT27S006NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S006NT1 has the common source configuration.
AFT27S006NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
AFT27S006NT1 Applications
ISM applications
DC large signal applications
