Name: AFT09MS007NT1
Brand: NXP USA Inc.
SKU: AFT09MS007NT1
Price: 4.58000 USD
Availability: InStock

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AFT09MS007NT1

Manufacturer part number:AFT09MS007NT1

Manufacturer:NXP USA Inc.

Description:AFT09MS007NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:AFT09MS007NT1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Package / Case	PLD-1.5W
Surface Mount	YES
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated	30V
HTS Code	8541.29.00.40
Subcategory	FET General Purpose Power
Peak Reflow Temperature (Cel)	260
Frequency	870MHz
[email protected] Reflow Temperature-Max (s)	40
Operating Temperature (Max)	150°C
Configuration	Single
Current - Test	100mA
Polarity/Channel Type	N-CHANNEL
Transistor Type	LDMOS
Gain	15.2dB
Power - Output	7.3W
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	182W
Voltage - Test	7.5V
RoHS Status	ROHS3 Compliant

AFT09MS007NT1 Product Details

AFT09MS007NT1 Description

AFT09MS007NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes AFT09MS007NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT09MS007NT1 has the common source configuration.