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AFT05MS003NT1

AFT05MS003NT1

AFT05MS003NT1

NXP USA Inc.

AFT05MS003NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT05MS003NT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case TO-243AA
PackagingTape & Reel (TR)
Published 2014
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 30V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 520MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS
Gain 20.8dB
Power - Output 3W
Voltage - Test 7.5V
RoHS StatusROHS3 Compliant
In-Stock:1960 items

Pricing & Ordering

QuantityUnit PriceExt. Price

AFT05MS003NT1 Product Details

AFT05MS003NT1 Description

AFT05MS003NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS003NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS003NT1 has the common source configuration.

AFT05MS003NT1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

AFT05MS003NT1 Applications

ISM applications

DC large signal applications


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